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Structure and electronic properties of SiO₂/Si multilayer superlattices: Si K edge and L₃,₂ edge x-ray absorption fine structure study

Sammynaiken, R. and Naftel, S. J and Sham, T. K. and Cheah, K. W. and Averboukh, B. and Huber, Rupert and Shen, Y. R. and Qin, G. G. and Ma, Z. C. and Zong, W. H. (2002) Structure and electronic properties of SiO₂/Si multilayer superlattices: Si K edge and L₃,₂ edge x-ray absorption fine structure study. Journal of Applied Physics 92 (6), pp. 3000-3006.

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Abstract

We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2 superlattices (SL). The SL system comprises four periods of elemental silicon with a spacing of 1, 1.4, 2.2, and 2.6 nm sandwiched by a 1.5 nm silicon oxide and capped by a 3 nm silicon oxide layer. These systems exhibit electroluminescence and photoluminescence. X-ray absorption near edge ...

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Item Type:Article
Date:2002
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
Identification Number:
ValueType
10.1063/1.1501742DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Petra Gürster
Deposited On:01 Feb 2011 11:17
Last Modified:13 Mar 2014 16:50
Item ID:19333
Owner Only: item control page

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