Sammynaiken, R. and Naftel, S. J and Sham, T. K. and Cheah, K. W. and Averboukh, B. and Huber, Rupert and Shen, Y. R. and Qin, G. G. and Ma, Z. C. and Zong, W. H. (2002) Structure and electronic properties of SiO₂/Si multilayer superlattices: Si K edge and L₃,₂ edge x-ray absorption fine structure study. Journal of Applied Physics 92 (6), pp. 3000-3006.
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We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2 superlattices (SL). The SL system comprises four periods of elemental silicon with a spacing of 1, 1.4, 2.2, and 2.6 nm sandwiched by a 1.5 nm silicon oxide and capped by a 3 nm silicon oxide layer. These systems exhibit electroluminescence and photoluminescence. X-ray absorption near edge ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||01 Feb 2011 11:17|
|Last modified:||13 Mar 2014 16:50|