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Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Ciorga, Mariusz and Wolf, Christian and Einwanger, Andreas and Utz, Martin and Schuh, Dieter and Weiss, Dieter (2011) Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices. AIP Advances 1 (2), p. 22113.

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Other URL: http://link.aip.org/link/doi/10.1063/1.3591397


We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,Mn)As/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the ...


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Item type:Article
Date:5 May 2011
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
85.30.Mn, 85.75.-d, 85.70.KhPACS
Keywords:gallium arsenide, gallium compounds, III-V semiconductors, spin polarised transport, spin valves, tunnel diodes, tunnelling magnetoresistance
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:11 Jul 2011 10:47
Last modified:13 Mar 2014 17:55
Item ID:21452
Owner only: item control page


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