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Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen, H. and Rossow, U. and Bremers, H. and Hoffmann, L. and Brendel, M. and Dräger, A. D. and Schwaiger, S. and Scholz, F. and Thalmair, J. and Zweck, Josef and Hangleiter, A. (2011) Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells. Applied Physics Letters 99, 011901 .

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Abstract

We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on non-polar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on ...

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Item Type:Article
Date:2011
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck
Identification Number:
ValueType
10.1063/1.3607301DOI
Classification:
NotationType
78.66.FdPACS
61.72.NnPACS
78.55.CrPACS
Keywords:gallium compounds, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum wells, stacking faults, wide band gap semiconductors
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Owner: Universitätsbibliothek Regensburg
Deposited On:25 Jul 2011 09:29
Last Modified:13 Mar 2014 17:55
Item ID:21617
Owner Only: item control page

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