Jönen, H. and Rossow, U. and Bremers, H. and Hoffmann, L. and Brendel, M. and Dräger, A. D. and Schwaiger, S. and Scholz, F. and Thalmair, J. and Zweck, Josef and Hangleiter, A.
Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells.
Applied Physics Letters 99, 011901 .
We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on non-polar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures.
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck|
|Keywords:||gallium compounds, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum wells, stacking faults, wide band gap semiconductors |
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Partially|
|Deposited On:||25 Jul 2011 09:29|
|Last Modified:||31 Aug 2011 15:15|