Karch, J. and Tarasenko, S. A. and Ivchenko, E. L. and Kamann, J. and Olbrich, P. and Utz, M. and Kvon, Z. D. and Ganichev, S. D.
Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors.
Phys. Rev. B 83, p. 121312.
Other URL: http://link.aps.org/doi/10.1103/PhysRevB.83.121312
We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor ﬁeld effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron ﬂuxes within each valley are generated, which
compensate each other and do not yield a net electric current. By disturbing the balance between the valley ﬂuxes, we demonstrate that the pure valley-orbit currents can be converted into a measurable electric current.