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Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

Karch, J. and Tarasenko, S. A. and Ivchenko, E. L. and Kamann, J. and Olbrich, P. and Utz, M. and Kvon, Z. D. and Ganichev, S. D. (2011) Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors. Phys. Rev. B 83, p. 121312.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.83.121312


Abstract

We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron fluxes ...

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Item Type:Article
Date:March 2011
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SPP 1459: Graphene
Research groups and research centres:Not selected
Identification Number:
ValueType
10.1103/PhysRevB.83.121312DOI
Related URLs:
URLURL Type
http://arxiv.org/abs/1010.4383Preprint
Classification:
NotationType
78.40.Fy, 72.40.+w, 73.40.Qv, 78.20.−ePACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Owner: Christoph Drexler
Deposited On:07 Sep 2011 06:29
Last Modified:13 Mar 2014 17:56
Item ID:22034
Owner Only: item control page
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