Belkov, Vassilij and Hirschinger, J. and Schowalter, Dieter and Niedernostheide, F. J. and Ganichev, Sergey and Prettl, Wilhelm and Mathúna, D. and Novák, V. (2000) Microwave induced patterns in n-GaAs and their photoluminescence imaging. Physical Review B 61 (20), pp. 13698-13702.
Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||05 Oct 2007|
|Last Modified:||13 Mar 2014 10:16|