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Microwave induced patterns in n-GaAs and their photoluminescence imaging

Belkov, Vassilij and Hirschinger, J. and Schowalter, Dieter and Niedernostheide, F. J. and Ganichev, Sergey and Prettl, Wilhelm and Mathúna, D. and Novák, V. (2000) Microwave induced patterns in n-GaAs and their photoluminescence imaging. Physical Review B 61 (20), pp. 13698-13702.

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Abstract

Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded ...

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Item Type:Article
Date:May 2000
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevB.61.13698DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:13 Mar 2014 10:16
Item ID:2206
Owner Only: item control page
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