Belkov, Vassilij and Hirschinger, J. and Schowalter, Dieter and Niedernostheide, F. J. and Ganichev, Sergey and Prettl, Wilhelm and Mathúna, D. and Novák, V.
Microwave induced patterns in n-GaAs and their photoluminescence imaging.
Physical Review B 61 (20), pp. 13698-13702.
Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/prb2000_microwave_patterns.pdf
Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in
homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown
to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns
is not constrained by the current feeding electrodes. It is, however, concluded that a feedback mechanism exists
between the formation of high-conducting structures and the homogeneity of the incident microwave