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Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures

Terentev, Ya. V. and Zoth, C. and Belkov, Vassilij and Olbrich, Peter and Drexler, C. and Lechner, V. and Lutz, P. and Mukhin, M. S. and Tarasenko, S. A. and Semenov, A. N. and Solovev, V. A. and Sedova, I. V. and Klimko, G. V. and Komissarova, T. A. and Ivanov, S. V. and Ganichev, Sergey (2011) Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures. Applied Physics Letters 99 (7), 072111.

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Other URL: http://dx.doi.org/doi/10.1063/1.3624921


Abstract

Diluted magnetic semiconductor heterovalent AlSb/InAs/ZnMnTe quantum well (QW) structures with an electron channel have been designed and grown applying molecular-beam epitaxy. The enhanced magnetic properties of QWs as a result of the exchange interaction with Mn2+ ions, are proved by measuring the microwave radiation induced spin polarized electric ...

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Item Type:Article
Date:2011
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
DOI:10.1063/1.3624921DOI
Classification:
NotationType
75.30.EtPACS
75.50.PpPACS
81.15.HiPACS
71.70.GmPACS
Keywords:aluminium compounds; electric current; exchange interactions (electron); III-V semiconductors; II-VI semiconductors; indium compounds; manganese compounds; molecular beam epitaxial growth; semiconductor quantum wells; semimagnetic semiconductors; wide band gap semiconductors; zinc compounds;
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Owner: Universitätsbibliothek Regensburg
Deposited On:07 Sep 2011 08:19
Last Modified:13 Mar 2014 17:57
Item ID:22079
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