Ganichev, Sergey (2003) Ionization of impurities in semiconductors by intense FIR radiation. In: Svechnikov, Sergey V. and Valakh, Mikhail Y., (eds.) Selected papers on optics and photonics: optical diagnostics of materials and devices for opto-, micro-, and quantum electronics. SPIE proceedings series, 5024. SPIE, Bellingham, Washington, pp. 12-23. ISBN 0-8194-4825-7.
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An analysis is made of the ionization of deep impurity centers induced by high-intensity terahertz radiation whose photon energies are tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric ...
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|Item Type:||Book Section|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||28 Nov 2007|
|Last Modified:||17 Nov 2009 04:10|