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Pattern Formation in Semiconductors

Belkov, Vassilij and Hirschinger, J. and Niedernostheide, F. and Ganichev, Sergey and Prettl, Wilhelm and Novák, V. (1999) Pattern Formation in Semiconductors. Nature (London) 397 (6718), p. 398.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/Nature1999p398_ball_lightning.pdf


Abstract

In semiconductors, nonlinear generation and recombination processes of free carriers and nonlinear charge transport can give rise to non-equilibrium phase transitions. At low temperatures, the basic nonlinearity is due to the autocatalytic generation of free carriers by impact ionization of shallow impurities. The electric field accelerates free electrons, causing an abrupt increase in free ...

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Item Type:Article
Date:4 February 1999
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1038/17040DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:13 Mar 2014 10:16
Item ID:2212
Owner Only: item control page
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