Shul'man, A. and Ganichev, Sergey and Dizhur, E. and Kotel'nikov, I. and Zepezauer, E. and Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. Physica B 272 (1-4), pp. 442-447.
Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaB1999_Schottky.pdf, http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-3Y4BRT9-4D&_user=616165&_coverDate=12%2F01%2F1999&_alid=673265221&_rdoc=1&_fmt=summary&_orig=search&_cdi=5535&_sort=d&_docanchor=&view=c&_ct=1&_acct=C000032338&_version=1&_urlVersion=0&_userid
The conductance of tunnel junctions formed by n-GaAs and a semitransparent metal electrode on its surface was shown to be changed by normally incident radiation with frequency below the plasma edge of n-GaAs. A spatial redistribution of the electrons due to the radiation pressure and the corresponding change in the shape of the self-consistent Schottky barrier are observed as a photoconductivity response. The comparison of the measured intensity dependence of the response to the theory has revealed an effective enhancement of the radiation field close to the n-GaAs/Me interface. The ratio Ke of the effective radiation intensity to the incident plain-wave intensity has turned out to be as large as 105. The high local electric field results in strong heating of the degenerate electron gas in the Schottky-barrier region that is mostly apparent as a photo-e.m.f. An analysis of the intensity dependence of the photo-e.m.f. is carried out involving the modification of the Schottky barrier by the ponderomotive force, the electron gas heating in Γ- and L-valleys, as well as the heating of LO phonons. The results confirm the value of Ke and allow to estimate the hot-electron temperature in Γ- and L-valleys.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Keywords:||Tunneling; Schottky-barrier junctions; Near-"eld enhancement; Hot electrons and LO phonons in GaAs|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||05 Oct 2007|
|Last Modified:||20 Jul 2011 21:09|