Shul'man, A. and Ganichev, Sergey and Dizhur, E. and Kotel'nikov, I. and Zepezauer, E. and Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. Physica B 272 (1-4), pp. 442-447.
Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaB1999_Schottky.pdf, http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-3Y4BRT9-4D&_user=616165&_coverDate=12%2F01%2F1999&_alid=673265221&_rdoc=1&_fmt=summary&_orig=search&_cdi=5535&_sort=d&_docanchor=&view=c&_ct=1&_acct=C000032338&_version=1&_urlVersion=0&_userid
The conductance of tunnel junctions formed by n-GaAs and a semitransparent metal electrode on its surface was shown to be changed by normally incident radiation with frequency below the plasma edge of n-GaAs. A spatial redistribution of the electrons due to the radiation pressure and the corresponding change in the shape of the self-consistent Schottky barrier are observed as a photoconductivity ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Keywords:||Tunneling; Schottky-barrier junctions; Near-"eld enhancement; Hot electrons and LO phonons in GaAs|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited on:||05 Oct 2007|
|Last modified:||13 Mar 2014 10:17|