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Terahertz tunnel ionization of DX centers in AlGaAs:Te

Ketterl, Hermann and Ziemann, E. and Ganichev, Sergey and Belyaev, A. and Schmult, Stefan and Prettl, Wilhelm and Yassievich, Irina (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. Physica B 273-27, pp. 766-769.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaB1999_tunneling_in_algaas.pdf, http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=675308206&_sort=d&view=c&_acct=C000032338&_version=1&_urlVersion=0&_userid=616165&md5=79c2b334a6f41eb06958be7f062b84c3


Ionization of DX-centers in AlGaAs : Te has been investigated in strong terahertz electric fields of FIR-laser radiation with photon energies much smaller than the impurity binding energy. Detachment of electrons from DX-centers is caused by phonon-assisted tunneling being independent of the field frequency as long as the tunneling time is smaller than the field period. In the opposite case an ...


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Item type:Article
Date:15 December 1999
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
Keywords:DX-center; Persistent photoconductivity; Ionization; Tunneling
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:05 Oct 2007
Last modified:13 Mar 2014 10:17
Item ID:2218
Owner only: item control page


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