Ketterl, Hermann and Ziemann, E. and Ganichev, Sergey and Belyaev, A. and Schmult, Stefan and Prettl, Wilhelm and Yassievich, Irina (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. Physica B 273-27, pp. 766-769.
Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaB1999_tunneling_in_algaas.pdf, http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=675308206&_sort=d&view=c&_acct=C000032338&_version=1&_urlVersion=0&_userid=616165&md5=79c2b334a6f41eb06958be7f062b84c3
Ionization of DX-centers in AlGaAs : Te has been investigated in strong terahertz electric fields of FIR-laser radiation with photon energies much smaller than the impurity binding energy. Detachment of electrons from DX-centers is caused by phonon-assisted tunneling being independent of the field frequency as long as the tunneling time is smaller than the field period. In the opposite case an enhancement of the emission probability with rising frequency has been observed. At very high-field strengths direct tunneling without involving phonons dominates and finally emission rates get frequency independent.
|Date:||15 December 1999|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Keywords:||DX-center; Persistent photoconductivity; Ionization; Tunneling|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||05 Oct 2007|
|Last Modified:||20 Jul 2011 21:09|