Ganichev, Sergey and Ziemann, E. and Gleim, T. and Prettl, Wilhelm and Yassievich, Irina and Perel, V. and Wilke, I. and Haller, E.
Carrier tunneling in high-frequency electric fields.
Physical Review Letters 80 (11), pp. 2409-2412.
Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/prl1998_tunneling_frequency.pdf, http://prola.aps.org/abstract/PRL/v80/i11/p2409_1
An enhancement of tunnel ionization of deep impurities in semiconductors in an alternating field as compared to static fields has been observed. The transition between the quasistatic and the high-frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure. A theory of tunnel ionization of deep impurities by high-frequency fields has been developed.