Ganichev, Sergey and Ziemann, E. and Gleim, T. and Prettl, Wilhelm and Yassievich, Irina and Perel, V. and Wilke, I. and Haller, E. (1998) Carrier tunneling in high-frequency electric fields. Physical Review Letters 80 (11), pp. 2409-2412.
An enhancement of tunnel ionization of deep impurities in semiconductors in an alternating field as compared to static fields has been observed. The transition between the quasistatic and the high-frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the ...
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|Date:||16 March 1998|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||05 Oct 2007|
|Last Modified:||13 Mar 2014 10:17|