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Carrier tunneling in high-frequency electric fields

Ganichev, Sergey and Ziemann, E. and Gleim, T. and Prettl, Wilhelm and Yassievich, Irina and Perel, V. and Wilke, I. and Haller, E. (1998) Carrier tunneling in high-frequency electric fields. Physical Review Letters 80 (11), pp. 2409-2412.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/prl1998_tunneling_frequency.pdf, http://prola.aps.org/abstract/PRL/v80/i11/p2409_1

Abstract

An enhancement of tunnel ionization of deep impurities in semiconductors in an alternating field as compared to static fields has been observed. The transition between the quasistatic and the high-frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure. A theory of tunnel ionization of deep impurities by high-frequency fields has been developed.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevLett.80.2409DOI
Classification:
NotationType
71.55.-iPACS
72.20.HtPACS
72.40.+wPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:20 Jul 2011 23:09
Item ID:2224
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