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Characterization of deep impurities in semiconductors by terahertz tunnel ionization

Ganichev, Sergey and Ziemann, E. and Yassievich, Irina and Schmalz, K. and Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Ashok, S. and Chevallier, J. and Sumino, K. and Sopori, B. L. and Goetz, W., (eds.) Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A. Materials Research Society symposium proceedings, 510. Materials Research Society, Warrendale, Pa., p. 595. ISBN 1-558-99416-5.

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Item Type:Book Section
Date:1998
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:12 Aug 2009 03:02
Item ID:2225
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