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Storage of electrons in shallow donor excited states of GaP:Te

Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1997) Storage of electrons in shallow donor excited states of GaP:Te. Physical Review B (Rapid Communic.) 55 (15), pp. 9243-9246.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/PRB_Rapid1997_impurities_in_GaP.pdf, http://link.aps.org/abstract/PRB/v55/p9243


Abstract

Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly ...

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Item Type:Article
Date:April 1997
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevB.55.9243DOI
Classification:
NotationType
71.55.EqPACS
72.15.LhPACS
72.20.JvPACS
73.40.GkPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:13 Mar 2014 10:17
Item ID:2228
Owner Only: item control page

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