Heating of two-dimensional electron gas and LO-phonons in delta-doped GaAs by far-infrared radiation

Kotel'nikov, I. and Shul'man, A. and Ganichev, Sergey and Varvanin, N. and Mayerhofer, B. and Prettl, Wilhelm (1996) Heating of two-dimensional electron gas and LO-phonons in delta-doped GaAs by far-infrared radiation. Solid State Communications 97 (10), pp. 827-832.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/solid_state_comm1996p827_phonons_heating.pdf

Abstract

A change in the conductivity of the two-dimensional electron gas in δ-doped GaAs samples due to pulsed far-infrared laser irradiation has been detected. It is shown that the observed positive photoconductivity is caused by heating of 2D electrons. The energy loss of hot electrons is accomplished by scattering with nonequilibrium longitudinal optical (LO) phonons. An expression for the effective emission frequency of LO phonons coupled with electrons and the thermal bath of acoustic phonons is derived and the dependence of the emission frequency on the lattice temperature is experimentally obtained in the range 77–300 K.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1016/0038-1098(95)00776-8DOI
Keywords:A. quantum wells; A. semiconductors; D. electron-phonon interaction; D. phonons; E. light absorption and reflection
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:20 Jul 2011 23:09
Item ID:2233
Owner Only: item control page