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Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation

Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1994) Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation. Solid State Communications 92 (11), pp. 883-887.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/solid_state_comm1994p883_887DirectTunnel_.pdf


Abstract

Ionization of semiconductor deep impurity centers has been observed in the far infrared where photon energies are several factors of ten smaller than the binding energy of the impurities. It is shown that the ionization is caused at high intensities by direct tunnel ionization in the electric field of the high power radiation. This optical method allows the investigation of the tunnelling process ...

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Item Type:Article
Date:December 1994
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Wilhelm Prettl
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Universitätsbibliothek Regensburg
Deposited On:05 Oct 2007
Last Modified:13 Mar 2014 10:18
Item ID:2256
Owner Only: item control page

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