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Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors

Schliemann, John (2006) Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors. Phys. Rev. B 74, 045214.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.74.045214


Abstract

We study the homogeneous interacting hole gas in p-doped bulk III-V semiconductors. The structure of the valence band is modeled by Luttinger’s Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent Hartree-Fock treatment. As a nontrivial feature of the model, the self-consistent ...

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Item Type:Article
Date:26 July 2006
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1103/PhysRevB.74.045214DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Webmaster Grifoni
Deposited On:11 May 2012 09:38
Last Modified:13 Mar 2014 18:49
Item ID:24294
Owner Only: item control page

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