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Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping

Hirmer, Michael and Schuh, Dieter and Wegscheider, Werner (2011) Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping. Applied Physics Letters 98, 082103.

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Abstract

We fabricated carbon doped InAs/ InxGa1−xAs/ InxAl1−xAs heterostructures, which show p-type and
n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x
=0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant
in InAs exhibits electron conductivity in InxGa1−xAs and InxAl1−xAs compounds with high indium
content. A special doping design has been employed to obtain hole conductivity. As a result, the
conductivity can be tuned from n-type to p-type with the In content and with different doping
profiles in these structures.

Item Type:

Article

Institutions:

Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider

Identification Number:

Value	Type
10.1063/1.3557026	DOI

Classification:

Notation	Type
73.40.Kp	PACS

Keywords:

aluminium compounds, carbon, electrical conductivity, electron density, gallium arsenide, III-V semiconductors, indium compounds, semiconductor growth, semiconductor heterojunctions, two-dimensional hole gas

Subjects:

500 Science > 530 Physics

Status:

Published

Refereed:

Yes, this version has been refereed

Created at the University of Regensburg:

Partially

Owner:

Universitätsbibliothek Regensburg

Deposited On:

14 May 2012 10:53