Hirmer, Michael and Schuh, Dieter and Wegscheider, Werner
Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping.
Applied Physics Letters 98, 082103.
We fabricated carbon doped InAs/ InxGa1−xAs/ InxAl1−xAs heterostructures, which show p-type and
n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x
=0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant
in InAs exhibits electron conductivity in InxGa1−xAs and InxAl1−xAs compounds with high indium
content. A special doping design has been employed to obtain hole conductivity. As a result, the
conductivity can be tuned from n-type to p-type with the In content and with different doping
profiles in these structures.
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Keywords:||aluminium compounds, carbon, electrical conductivity, electron density, gallium arsenide, III-V semiconductors, indium compounds, semiconductor growth, semiconductor heterojunctions, two-dimensional hole gas|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Partially|
|Deposited On:||14 May 2012 08:53|
|Last Modified:||14 May 2012 08:53|