Hirmer, Michael and Schuh, Dieter and Wegscheider, Werner (2011) Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping. Applied Physics Letters 98, 082103.
We fabricated carbon doped InAs/ InxGa1−xAs/ InxAl1−xAs heterostructures, which show p-type and n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x =0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant in InAs exhibits electron conductivity in InxGa1−xAs and InxAl1−xAs compounds with high indium content. A ...
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|Series of the University of Regensburg:||Preprintreihe der Fakultät Mathematik|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||aluminium compounds, carbon, electrical conductivity, electron density, gallium arsenide, III-V semiconductors, indium compounds, semiconductor growth, semiconductor heterojunctions, two-dimensional hole gas|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Partially|
|Deposited On:||14 May 2012 08:53|
|Last Modified:||13 Mar 2014 18:51|