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Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping

Hirmer, Michael and Schuh, Dieter and Wegscheider, Werner (2011) Carbon doped InAlAs/InGaAs/InAs heterostructures: Tuning from n- to p-doping. Applied Physics Letters 98, 082103.

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Abstract

We fabricated carbon doped InAs/ InxGa1−xAs/ InxAl1−xAs heterostructures, which show p-type and n-type conductivity for different In contents. Two-dimensional hole gas in a structure with x =0.75 has been prepared in the ternary compound, despite the fact that carbon as an n-type dopant in InAs exhibits electron conductivity in InxGa1−xAs and InxAl1−xAs compounds with high indium content. A ...

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Item Type:Article
Date:2011
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.3557026DOI
Classification:
NotationType
73.40.Kp PACS
Keywords:aluminium compounds, carbon, electrical conductivity, electron density, gallium arsenide, III-V semiconductors, indium compounds, semiconductor growth, semiconductor heterojunctions, two-dimensional hole gas
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Owner: Universitätsbibliothek Regensburg
Deposited On:14 May 2012 08:53
Last Modified:13 Mar 2014 18:51
Item ID:24325
Owner Only: item control page

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