Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

Wittmann, Bernhard and Danilov, Sergey and Belkov, Vassilij and Tarasenko, Sergey and Novik, E. G. and Buhmann, Hartmut and Bruene, C. and Molenkamp, L. W. and Ivchenko, Eougenious and Kvon, Z. D. and Mikhailov, N. N. and Dvoretsky, S. A. and Vinh, N. Q. and van der Meer, A. F. G. and Murdin, B. and Ganichev, Sergey (2010) Circular photogalvanic effect in HgTe/CdHgTe quantum well structures. Semiconductor Science and Technology 25 (9), 095005.

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Other URL: http://dx.doi.org/10.1088/0268-1242/25/9/095005

Abstract

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1088/0268-1242/25/9/095005DOI
Classification:
NotationType
73.21.Fg Quantum wells PACS
78.70.Gq Microwave and radio-frequency interactions PACS
73.63.Hs Quantum wells PACS
78.67.De Quantum wellsPACS
72.40.+w Photoconduction and photovoltaic effects PACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Claudia Rahm
Deposited On:22 May 2012 15:03
Last Modified:22 May 2012 15:03
Item ID:24488
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