Lechner, Vera and Golub, Leonid and Lomakina, F. and Belkov, Vassilij and Olbrich, Peter and Stachel, Sebastian and Caspers, Ines and Griesbeck, Michael and Kugler, Michael and Hirmer, Michael and Korn, Tobias and Schueller, Christian and Schuh, Dieter and Wegscheider, Werner and Ganichev, Sergey
Spin and orbital mechanisms of the magnetogyrotropic photogalvanic effects in GaAs/AlxGa1-xAs quantum well structures.
Physical Review B (PRB) 83 (15), p. 155313.
Other URL: http://link.aps.org/doi/10.1103/PhysRevB.83.155313
We report on the study of the linear and circular magnetogyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most QW widths, the MPGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.