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Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Ormont, A. and Varvanin, N. and Prettl, Wilhelm (1997) Giant nonlinearity of photoresistive effect in n-GaAs/Al tunnel junctions with micro- inhomogeneties of metal electrode. In: 3rd Russian conference on semiconductor physics "Semiconductors-97", 01. - 05. Dezember 1997, Moskau, Russland.

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Item Type:Conference or Workshop Item (UNSPECIFIED)
Date:1997
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Christoph Drexler
Deposited On:05 Oct 2007
Last Modified:05 Aug 2009 13:39
Item ID:2450
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