Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1997) Long-living shallow donor excited states of GaP:Te. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster.
Full text not available from this repository.
Long-living shallow donor excited states in semiconductors existing forseveral miliseconds have been observed. Te-donors in GaP have been ionized by means of phonon assisted tunneling in the electric field of pulsed far-infrared laser radiation. The measurements have been carried out in the temperature range of 20-90 K using radiation of wavelength between 35 and 280 mm and intensities up to 1 MW/cm2. The photocunductive signal caused by ionization in response to the laser pulse shows in addition to a fast component (of the order 100 ns) a second component rising after the exciting pulse has ceased and afterwards decaying exponentially. This decay has a strongly temperature dependent time constant varying from microseconds to several miliseconds. It is shown that this complex temporal structure of the signal is caused by a storage of carriers in the valley-orbit split 1s(E) Te shallow donor state. Furthermore it has been proved by the observation of far-infrared to mid-infrared up-conversion that the final step of recombination is achieved by radiative transitions.
|Item Type:||Conference or Workshop Item (Speech)|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||05 Oct 2007|
|Last Modified:||05 Aug 2009 13:39|