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Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

Raith, Martin and Stano, Peter and Fabian, Jaroslav (2012) Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots. Physical Review B (PRB) 86 (20), p. 205321.

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Abstract

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of 29Si (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation ...

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Item Type:Article
Date:28 November 2012
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Identification Number:
ValueType
arXiv:1206.6906arXiv ID
10.1103/PhysRevB.86.205321DOI
Related URLs:
URLURL Type
http://arxiv.org/abs/1206.6906Preprint
http://link.aps.org/doi/10.1103/PhysRevB.86.205321Publisher
Classification:
NotationType
72.25.Rb, 03.67.Lx, 71.70.Ej, 73.21.La PACS
Keywords:quantum dots, silicon, spin relaxation, singlet, triplet
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Dr. Martin Raith
Deposited On:02 Jul 2012 12:53
Last Modified:13 Mar 2014 19:30
Item ID:25248
Owner Only: item control page

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