Raith, Martin and Stano, Peter and Fabian, Jaroslav (2012) Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots. Physical Review B (PRB) 86 (20), p. 205321.
|PDF - Submitted Version|
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of 29Si (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation ...
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|Date:||28 November 2012|
|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian|
|Keywords:||quantum dots, silicon, spin relaxation, singlet, triplet|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Owner:||Dr. Martin Raith|
|Deposited On:||02 Jul 2012 12:53|
|Last Modified:||13 Mar 2014 19:30|