Library

Helicity sensitive terahertz radiation detection by field effect transistors

Drexler, Christoph and Dyakonova, Nina and Olbrich, Peter and Karch, Johannes and Schafberger, Michael and Karpierz, K and Mityagin, Yu and Lifshits, M.B. and Teppe, F and Klimenko, O and Meziani, Y.M. and Knap, W. and Ganichev, Sergey (2012) Helicity sensitive terahertz radiation detection by field effect transistors. Journal of Applied Physics 111 (12), p. 124504.

[img]
Preview
PDF - Published Version
Download (631kB)

at publisher (via DOI)


Abstract

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. ...

plus


Linked items

  • [img]
    Preview
    Drexler, Christoph and Dyakonova, Nina and Olbrich, Peter and Karch, Johannes and Schafberger, Michael and Karpierz, K and Mityagin, Yu and Lifshits, M.B. and Teppe, F and Klimenko, O and Meziani, Y.M. and Knap, W. and Ganichev, Sergey (2012) Helicity sensitive terahertz radiation detection by field effect transistors. Journal of Applied Physics 111 (12), p. 124504. [Currently Displayed]
    • [img] [img] [img] [img] [img] Drexler, Christoph and Dyakonova, Nina and Olbrich, Peter and Karch, Johannes and Schafberger, Michael and Karpierz, K. and Mityagin, Yu and Lifshits, M. B. and Teppe, F. and Klimenko, O. and Meziani, Y. M. and Knap, W. and Ganichev, Sergey (2015) Data archive of Journal of Applied Physics 111, 124504. [Dataset] (Unpublished)

Export bibliographical data



Item Type:Article
Date:20 June 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.4729043DOI
Classification:
NotationType
85.30.TvPACS
07.57.PtPACS
Keywords:aluminium compounds, gallium arsenide, high electron mobility transistors, III-V semiconductors, terahertz wave detectors
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:09 Jul 2012 14:43
Last Modified:20 Mar 2015 09:01
Item ID:25299
Owner Only: item control page

Downloads

Downloads per month over past year

  1. University

University Library

Publication Server

Contact person
Gernot Deinzer

Telefon 0941 943-2759
Contact