Drexler, Christoph and Dyakonova, Nina and Olbrich, Peter and Karch, Johannes and Schafberger, Michael and Karpierz, K and Mityagin, Yu and Lifshits, M.B. and Teppe, F and Klimenko, O and Meziani, Y.M. and Knap, W. and Ganichev, Sergey (2012) Helicity sensitive terahertz radiation detection by field effect transistors. Journal of Applied Physics 111 (12), p. 124504.
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Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. ...
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|Date:||20 June 2012|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Keywords:||aluminium compounds, gallium arsenide, high electron mobility transistors, III-V semiconductors, terahertz wave detectors|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||09 Jul 2012 14:43|
|Last Modified:||09 Jul 2012 14:43|