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Helicity sensitive terahertz radiation detection by field effect transistors

Drexler, Christoph and Dyakonova, Nina and Olbrich, Peter and Karch, Johannes and Schafberger, Michael and Karpierz, K and Mityagin, Yu and Lifshits, M.B. and Teppe, F and Klimenko, O and Meziani, Y.M. and Knap, W. and Ganichev, Sergey (2012) Helicity sensitive terahertz radiation detection by field effect transistors. Journal of Applied Physics 111 (12), p. 124504.

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Other URL: http://link.aip.org/link/doi/10.1063/1.4729043


Abstract

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. ...

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Item Type:Article
Date:20 June 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.4729043DOI
Classification:
NotationType
85.30.TvPACS
07.57.PtPACS
Keywords:aluminium compounds, gallium arsenide, high electron mobility transistors, III-V semiconductors, terahertz wave detectors
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Claudia Rahm
Deposited On:09 Jul 2012 14:43
Last Modified:09 Jul 2012 14:43
Item ID:25299
Owner Only: item control page
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