Drexler, Christoph and Dyakonova, Nina and Olbrich, Peter and Karch, Johannes and Schafberger, Michael and Karpierz, K and Mityagin, Yu and Lifshits, M.B. and Teppe, F and Klimenko, O and Meziani, Y.M. and Knap, W. and Ganichev, Sergey (2012) Helicity sensitive terahertz radiation detection by field effect transistors. Journal of Applied Physics 111 (12), p. 124504.
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Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also, linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature, and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.
|Date:||20 June 2012|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev|
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Keywords:||aluminium compounds, gallium arsenide, high electron mobility transistors, III-V semiconductors, terahertz wave detectors|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||09 Jul 2012 14:43|
|Last Modified:||09 Jul 2012 14:43|