Betthausen, C. and Dollinger, T. and Saarikoski, H. and Kolkovsky, V. and Karczewski, G. and Wojtowicz, T. and Richter, K. and Weiss, D. (2012) Spin-Transistor Action via Tunable Landau-Zener Transitions. Science 337 (6092), pp. 324-327.
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Other URL: http://www.sciencemag.org/cgi/content/full/337/6092/324?ijkey=0r.dxompwfXWo&keytype=ref&siteid=sci , http://www.sciencemag.org/cgi/rapidpdf/337/6092/324?ijkey=0r.dxompwfXWo&keytype=ref&siteid=sci
Spin-transistor designs relying on spin-orbit interaction suffer from low signal levels resulting from low spin-injection efficiency and fast spin decay. Here, we present an alternative approach in which spin information is protected by propagating this information adiabatically. We demonstrate the validity of our approach in a cadmium manganese telluride diluted magnetic semiconductor quantum well structure in which efficient spin transport is observed over device distances of 50 micrometers. The device is turned “off” by introducing diabatic Landau-Zener transitions that lead to a backscattering of spins, which are controlled by a combination of a helical and a homogeneous magnetic field. In contrast to other spin-transistor designs, we find that our concept is tolerant against disorder.
|Institutions:|| Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter|
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen, FOR 1483: Topological Electronics, WE 247618|
|Keywords:||spin transport, adiabatic, spin transistor, CdMnTe, giant Zeeman effect|
|Subjects:||500 Science > 530 Physics|
600 Technology > 600 Technology (Applied sciences)
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Partially|
|Deposited On:||25 Jul 2012 10:19|
|Last Modified:||08 Nov 2012 08:43|
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