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Epitaxie von (Ga,Mn)As

URN to cite this document: urn:nbn:de:bvb:355-epub-258925

Utz, Martin (2012) Epitaxie von (Ga,Mn)As. PhD, Universität Regensburg.

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Abstract (German)

Die vorliegende Arbeit beschäftigt sich mit der Verbesserung der magnetischen Eigenschaften des ferromagnetischen Halbleiters Galliummanganarsenid (GaMnAs), der ein wichtiges Ausgangsmaterial für die Forschung auf dem Gebiet der Spintronik darstellt. Es wird erläutert, wie mit Hilfe der Bandkanten-Absorptionsspektroskopie und einem speziellen Verfahren zur Eichung der Materialflüsse die ...


Translation of the abstract (English)

The focus of this work lies on the enhancement of the magnetic properties of the ferromagnetic semiconductor Gallium manganese arsenide (GaMnAs), which is a basic material for the research in spintronics: It is told, how a high sample reproducibility and a strong control over the growth process can be gained by applying band edge spectroscopy and a special procedure for the material flux ...


Export bibliographical data

Item type:Thesis of the University of Regensburg (PhD)
Date:9 October 2012
Referee:Prof. Dr. Werner Wegscheider and Prof. Dr. Dominique Bougeard
Date of exam:14 September 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Keywords:GaMnAs, spintronic, Manganese content, Curie temperature, thin layers, ferromagnetic semiconductor, annealing, molecular beam epitaxy
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited on:09 Oct 2012 08:58
Last modified:13 Mar 2014 19:16
Item ID:25892
Owner only: item control page


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