Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate

Gmeinwieser, N. and Engl, K. and Gottfriedsen, P. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H. and Leber, A. and Lell, A. and Härle, V. (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate. Journal of Appli ed Physics 96, J. Appl. Phys..

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Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Ulrich Schwarz
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner:Redakteur Physik
Deposited On:15 Nov 2007
Last Modified:05 Aug 2009 15:40
Item ID:2600
Owner Only: item control page