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TAMR effect in (Ga,Mn)As-based tunnel structures

Ciorga, Mariusz and Schlapps, Markus and Einwanger, Andreas and Geißler, Stefan and Sadowski, J. and Wegscheider, Werner and Weiss, Dieter (2007) TAMR effect in (Ga,Mn)As-based tunnel structures. New J. Phys. 9, p. 351.

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Other URL: http://www.iop.org/EJ/article/1367-2630/9/9/351/njp7_9_351.html


We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p + -(Ga, Mn)As/n + -GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We ...


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Item Type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:15 Nov 2007
Last Modified:27 Jan 2010 04:12
Item ID:2621
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