Ciorga, Mariusz and Schlapps, Markus and Einwanger, Andreas and Geißler, Stefan and Sadowski, J. and Wegscheider, Werner and Weiss, Dieter (2007) TAMR effect in (Ga,Mn)As-based tunnel structures. New J. Phys. 9, p. 351.
Full text not available from this repository.
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p + -(Ga, Mn)As/n + -GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong anisotropic magnetoresistance behaviour with features that could be attributed to the novel tunnelling anisotropic magnetoresistance effect. We argue however, that in case of nanoconstricted (Ga,Mn)As wires, some other physics has to be additionally employed to fully explain the observed effects.
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||15 Nov 2007|
|Last Modified:||27 Jan 2010 04:12|