Plechinger, Gerd and Heydrich, Stefanie and Eroms, Jonathan and Weiss, Dieter and Schüller, Christian and Korn, Tobias
Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes.
AIP | Applied Physics Letters.
Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 cm−1. Its position strongly depends on ...
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