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Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

Endres, Bernhard and Ciorga, Mariusz and Wagner, R. and Ringer, Sebastian and Utz, Martin and Bougeard, Dominique and Weiss, Dieter and Back, Christian and Bayreuther, Günther (2012) Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel. Appl. Phys. Lett. 100, 092405.

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Abstract

The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 μm thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, ...

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Item Type:Article
Date:1 March 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1063/1.3691175 DOI
Classification:
NotationType
72.25.DcPACS
75.30.DsPACS
75.30.WxPACS
75.40.GbPACS
75.50.PpPACS
75.78.CdPACS
Keywords:current density, gallium arsenide, Hanle effect, III-V semiconductors, numerical analysis, spin dynamics, spin polarised transport
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Universitätsbibliothek Regensburg
Deposited On:23 Oct 2012 06:32
Last Modified:13 Mar 2014 19:19
Item ID:26505
Owner Only: item control page

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