Endres, Bernhard and Ciorga, Mariusz and Wagner, R. and Ringer, Sebastian and Utz, Martin and Bougeard, Dominique and Weiss, Dieter and Back, Christian and Bayreuther, Günther
Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel.
Appl. Phys. Lett. 100, 092405.
The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 μm thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.
|Date:||1 March 2012|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard|
|Keywords:||current density, gallium arsenide, Hanle effect, III-V semiconductors, numerical analysis, spin dynamics, spin polarised transport |
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||23 Oct 2012 06:32|
|Last Modified:||26 Feb 2013 13:11|