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Antiferromagnetic coupling across silicon regulated by tunneling currents

Gareev, R. R. and Schmid, M and Vancea, Johann and Back, C. H. and Schreiber, Rainer and Bürgler, D. and Schneider, C. M. and Stromberg, F. and Wende, Heiko (2012) Antiferromagnetic coupling across silicon regulated by tunneling currents. Applied Physics Letters.

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Abstract

We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current ...

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Item Type:Article
Date:10 January 2012
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Identification Number:
ValueType
10.1063/1.3675872DOI
Classification:
NotationType
73.40.NsPACS
75.50.EePACS
75.60.EjPACS
72.20.HtPACS
72.20.MyPACS
72.25.-bPACS
Keywords:antiferromagnetic materials, ballistic transport, elemental semiconductors, hot carriers, iron, magnetisation, magnetoresistance, semiconductor-metal boundaries, silicon, spin polarised transport, tunnelling
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Martin Schnabl
Deposited On:23 Oct 2012 06:32
Last Modified:13 Mar 2014 19:19
Item ID:26507
Owner Only: item control page

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