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Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

Gray, A.X. and Minar, Jan and Ueda, S. and Stone, P.P. and Yamashita, Y. and Fujii, J. and Braun, J. and Plucinski, L. and Schneider, C.M. and Pannaccione, G. and Ebert, Hubert and Dubon, O.D. and Kobayashi, K. and Fadley, C. S. (2012) Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission. Nature Materials.

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Other URL: http://www.nature.com/nmat/journal/v11/n11/full/nmat3450.html


Abstract

A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga0:97Mn0:03As, and the reference undoped GaAs. The data are compared to theory based on the ...

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Item Type:Article
Date:14 October 2012
Institutions:UNSPECIFIED
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1038/nmat3450DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:No
Owner: Claudia Rahm
Deposited On:23 Oct 2012 12:44
Last Modified:23 Oct 2012 12:44
Item ID:26550
Owner Only: item control page
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