Gray, A.X. and Minar, Jan and Ueda, S. and Stone, P.P. and Yamashita, Y. and Fujii, J. and Braun, J. and Plucinski, L. and Schneider, C.M. and Pannaccione, G. and Ebert, Hubert and Dubon, O.D. and Kobayashi, K. and Fadley, C. S. (2012) Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission. Nature Materials.
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A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga0:97Mn0:03As, and the reference undoped GaAs. The data are compared to theory based on the coherent potential approximation and fully relativistic one-step-model photoemission calculations including matrix-element effects. Distinct differences are found between angle-resolved, as well as angle-integrated, valence
spectra of Ga0:97Mn0:03As and GaAs, and these are in good agreement with theory. Direct observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about 400meV below this level, as well as changes throughout the full valence-level energy range, indicates that ferromagnetism in Ga1−xMnxAs must be considered to arise from both p–d exchange and double exchange, thus providing a more unifying picture of this controversial material.
|Date:||14 October 2012|
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||No|
|Deposited On:||23 Oct 2012 12:44|
|Last Modified:||23 Oct 2012 12:44|