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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-268613
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.26861
Zusammenfassung
We report on measurements of direct spin Hall effect in a lightly n-doped GaAs channel with conductivity below 2000 Ω−1 m−1. As spin detecting contacts, we employed highly efficient ferromagnetic Fe/(Ga,Mn)As/GaAs Esaki diode structures. We investigate bias and temperature dependence of the measured spin Hall signal and evaluate the value of total spin Hall conductivity and its dependence on ...
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