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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-282397
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.28239
Zusammenfassung
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; ...
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