Zusammenfassung
Numerical calculations are presented for predicting the large positive magnetoresistance ratios R(B)/R(0) which are often observed in insulating materials. The magnetic field causes shrinkage of the localized electronic wave function, resulting in less overlapping between the hopping sites and hence a relatively large increase of the resistance in the insulating material. Two specific cases are ...
Zusammenfassung
Numerical calculations are presented for predicting the large positive magnetoresistance ratios R(B)/R(0) which are often observed in insulating materials. The magnetic field causes shrinkage of the localized electronic wave function, resulting in less overlapping between the hopping sites and hence a relatively large increase of the resistance in the insulating material. Two specific cases are considered: (a) an insulating 3D sample that exhibits a “Mott” variable-range hopping law in its zero-field resistance and (b) an insulating 3D sample that exhibits an “Efros–Shklovskii” variable-range hopping law in its zero field resistance. The numerical calculations are tabulated. The general 3D “soft gap” case is also discussed.
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