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Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures
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Abstract
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa)N based LEDs.
© 2015 AIP Publishing LLC
Received Fri Feb 27 00:00:00 UTC 2015
Accepted Thu Jul 09 00:00:00 UTC 2015
Published online Tue Jul 21 00:00:00 UTC 2015
Acknowledgments:
We gratefully acknowledge the financial support of the European Union FP7, NEWLED Project, Grant No. 318388.
Article outline:
I. INTRODUCTION
II. METHOD
III. RESULTS AND DISCUSSION
A. Directionality due to polarization fields
B. Variation of transfer distance
C. Interaction of QW transfer probabilities
D. Number of detection wells
IV. CONCLUSION
/content/aip/journal/jap/118/3/10.1063/1.4927154
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http://dx.doi.org/10.1063/1.4818761
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14. B. Galler, H.-J. Lugauer, M. Binder, R. Hollweck, Y. Folwill, A. Nirschl, A. Gomez-Iglesias, B. Hahn, J. Wagner, and M. Sabathil, Appl. Phys. Express 6, 112101 (2013).
http://dx.doi.org/10.7567/APEX.6.112101
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15. F. Bertazzi, M. Goano, X. Zhou, M. Calciati, G. Ghione, M. Matsubara, and E. Bellotti, in IWN 2014 International Workshop on Nitride Semiconductors, Wrocław, 2014.
http://aip.metastore.ingenta.com/content/aip/journal/jap/118/3/10.1063/1.4927154
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/content/aip/journal/jap/118/3/10.1063/1.4927154
Tue Jul 21 00:00:00 UTC 2015
Thu Jul 23 08:16:42 UTC 2015
Abstract
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa)N based LEDs.
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