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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-349070
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.34907
Alternative Links zum Volltext:DOI
Zusammenfassung
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb−SrTiO3 with Co/AlOx spin injection contacts at room temperature. The in-plane spin lifetime τ∥, as well as the ratio of the out-of-plane to in-plane spin lifetime τ⊥/τ∥, is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of ...
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