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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-365055
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.36505
Alternative Links zum Volltext:DOI
Zusammenfassung
We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene/WSe2/SiO2 samples we observe mobilities of similar to 12 000 cm(2) V-1 s(-1). Magnetic-field-dependent resistance measurements on these ...
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