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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-412986
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.41298
Zusammenfassung
We present a detailed study of the electronic and spin-orbit properties of single and bilayer graphene in proximity to the topological insulator Bi2Se3. Our approach is based on first-principles calculations, combined with symmetry derived model Hamiltonians that capture the low-energy band properties. We consider single and bilayer graphene on 1-3 quintuple layers of Bi2Se3 and extract orbital ...
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