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Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime

Weiss, Dieter and Mosser, V. and Gudmundsson, V. and Gerhardts, R. and Klitzing, Klaus von (1987) Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime. Solid State Communication 62 (2), pp. 89-91.

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Abstract

The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier ...

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Item Type:Article
Date:1987
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Identification Number:
ValueType
10.1016/0038-1098(87)91118-5 DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Owner: Universitätsbibliothek Regensburg
Deposited On:25 May 2009 13:19
Last Modified:13 Mar 2014 14:15
Item ID:7852
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