Weiss, Dieter and Mosser, V. and Gudmundsson, V. and Gerhardts, R. and Klitzing, Klaus von
Magnetic Field Dependence of Gate Voltage and Current in a GaAs-Heterostructure in the Quantum Hall Regime.
Solid State Communication 62 (2), pp. 89-91.
The current flow at a fixed gate voltage and the floating gate voltage for fixed charge density in a gated GaAs heterostructure have been measured as a function of the magnetic field. The voltage oscillations which reflect the behaviour of the chemical potential have been clearly resolved. The experimental results are explained by a statistical model of inhomogeneities in the carrier concentration implying an effective density of states between the Landau levels.