Shitara, T and Tornow, M and Kurtenbach, A and Weiss, Dieter and Eberl, K and Klitzing, K (1995) Quasi one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown in patterned substrates. Applied Physics Letters 66, p. 2385.
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Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs (001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron systems. We estimate the electron mobility in a 250 nm wide wire to be larger than 51 000 cm2/V s at a carrier concentration of 3.3 × 1011 cm 2.This mobility is comparable to the one measured in a wide reference sample fabricated under identical conditions. ©1995 American Institute of Physics.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||25 May 2009 15:20|
|Last Modified:||05 Aug 2009 15:57|
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