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Quasi one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown in patterned substrates

Shitara, T and Tornow, M and Kurtenbach, A and Weiss, Dieter and Eberl, K and Klitzing, K (1995) Quasi one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown in patterned substrates. Applied Physics Letters 66, p. 2385.

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Abstract

Hall bars with widths down to about 250 nm were prepared by overgrowth on patterned GaAs (001) substrates using molecular beam epitaxy. This fabrication method generates a lateral confinement potential determined by AlGaAs barriers. The four-terminal magnetoresistance of a single wire, measured at 1.3 K after illumination, displays the well-known features of quasi-one-dimensional electron ...

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Export bibliographical data

Item Type:Article
Date:1995
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Claudia Rahm
Deposited On:25 May 2009 13:20
Last Modified:05 Aug 2009 13:57
Item ID:7876
Owner Only: item control page
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