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Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

Kreuzer, S and Wegscheider, Werner and Weiss, Dieter (2001) Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions. Journal of Applied Physics 89, p. 6751.

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Abstract

A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I–V measurements show a pronounced nonlinearity. Their variation with ...

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Item Type:Article
Date:2001
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Deposited On:25 May 2009 13:20
Last Modified:05 Aug 2009 13:57
Item ID:7912
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