Kreuzer, S and Wegscheider, Werner and Weiss, Dieter (2001) Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions. Journal of Applied Physics 89, p. 6751.
Full text not available from this repository.
A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The IV measurements show a pronounced nonlinearity. Their variation with temperature depends strongly on the barrier thickness which is weak for the 6 nm barriers, a clear indication for quantum mechanical tunneling as the dominant transport channel.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||25 May 2009 13:20|
|Last Modified:||05 Aug 2009 13:57|