Spin-polarized tunneling through single crystal GaAs(001) barriers

Abstract

We investigate spin-dependent transport through an epitaxial GaAs(001) barrier sandwiched between polycrystalline iron films. Electron transport through the barrier is dominated by quantum mechanical tunneling, demonstrated by a nonlinear I–V characteristic, an exponential dependence of the tunneling current on the barrier thickness and the temperature dependence of the current. Though small a clear tunneling magnetoresistance effect proves spin- dependent transport through the Fe–GaAs interface. The small size of the effect and the high-field magnetoresistance suggest that spin–flip scattering plays a decisive role in transport.