Reinwald, M and Wurstbauer, Ursula and Döppe, Matthias and Kipferl, W and Wagenhuber, Klaus and Tranitz, H and Weiss, Dieter and Wegscheider, Werner (2005) Growth of (Ga,Mn)As on GaAs(001) and (311)A in a high-mobility MBE system. Journal of Crystal Growth 278, p. 690.
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We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||25 May 2009 13:21|
|Last Modified:||05 Aug 2009 13:57|