Lechner, Vera and Golub, Leonid and Olbrich, Peter and Stachel, Sebastian and Schuh, Dieter and Wegscheider, Werner and Belkov, Vassilij and Ganichev, Sergey (2009) Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells. Applied Physics Letters 94, 242109-1-242109-3.
Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect.We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation
during the growth process. Tuning the SIA by the delta-doping position, we can grow samples with almost equal degrees of structure and bulk inversion asymmetry.
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
|Projects:||SFB 689: Spinphänomene in reduzierten Dimensionen|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Partially|
|Deposited On:||29 Jun 2009 11:44|
|Last Modified:||13 Mar 2014 10:47|