Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells

Abstract

Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect.We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation
during the growth process. Tuning the SIA by the delta-doping position, we can grow samples with almost equal degrees of structure and bulk inversion asymmetry.