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Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells

Lechner, Vera and Golub, Leonid and Olbrich, Peter and Stachel, Sebastian and Schuh, Dieter and Wegscheider, Werner and Belkov, Vassilij and Ganichev, Sergey (2009) Tuning of structure inversion asymmetry by the delta-doping position in (001)-grown GaAs quantum wells. Applied Physics Letters 94, 242109-1-242109-3.

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Abstract

Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect.We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation during the growth ...

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Item Type:Article
Date:June 2009
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
10.1063/1.3156027DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Owner: Christoph Drexler
Deposited On:29 Jun 2009 11:44
Last Modified:13 Mar 2014 10:47
Item ID:8284
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