Electronic Raman scattering in p-doped GaAs/Ga1-xAlxAs quantum-well structures: Scattering mechanisms and many-particle interactions

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9575

Schüller, Christian ; Krause, Jürgen ; Schaack, G. ; Weimann, G. ; Panzlaff, K.

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Veröffentlichungsdatum dieses Volltextes: 25 Sep 2009 07:49

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Zusammenfassung

By means of resonance Raman spectroscopy we have investigated intersubband transitions of quasi-two-dimensional (2D) hole gases in p-type modulation-doped GaAs/Ga1-xAlxAs quantum-well structures. The observed excitations have an essentially single-particle character due to Landau damping of collective excitations and due to single-particle scattering by energy-density fluctuations under ...