Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.9576

Kirchner, M. ; Schüller, Christian ; Krause, Jürgen ; Schaack, G. ; Panzlaff, K. ; Weimann, G.

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Veröffentlichungsdatum dieses Volltextes: 25 Sep 2009 07:50

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Zusammenfassung

By means of resonance Raman spectroscopy we have observed a characteristic shift of hole-intersubband transitions with excitation energy in p-doped GaAs/AlxGa1-xAs quantum-well structures. As possible reasons for the shift, the nonparabolicity of the valence subbands as well as fluctuations of the well width are discussed. Both contributions can be separated experimentally by application of an ...