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Hole-intersubband excitations and luminescence transitions in p-doped GaAs---AlGaAs multiple quantum wells

Dahl, M. and Ils, P. and Kraus, J. and Müller, B. and Schaack, G. and Schüller, Christian and Ebeling, J. K. and Weimann, G. (1991) Hole-intersubband excitations and luminescence transitions in p-doped GaAs---AlGaAs multiple quantum wells. Superlattices and Microstructures 9 (1), pp. 77-81.

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Abstract

We have performed resonant Raman spectroscopy on two p-type modulation-doped GaAs---AlGaAs multiple quantum well structures with well widths dW = 10 nm and dW = 30 nm. With the frequency of the dyelaser nearly in resonance with the energy difference between conduction and valence band states of the same subband quantum number n we simultaneously observe Raman intensity of hole intersubband ...

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Item Type:Article
Date:1991
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Identification Number:
ValueType
10.1016/0749-6036(91)90096-ADOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:02 Oct 2009 09:20
Last Modified:13 Mar 2014 11:03
Item ID:9651
Owner Only: item control page
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