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Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Einwanger, Andreas and Ciorga, Mariusz and Wurstbauer, Ulrich and Schuh, Dieter and Wegscheider, Werner and Weiss, Dieter (2009) Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices. Applied Physics Letters 95, p. 152101.

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We report here on anisotropy of spin polarization obtained in lateral all-semiconductor, all-electrical spin injection devices employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8% ...


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Item Type:Article
Date:12 October 2009
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
doi:10.1063/1.3247187 DOI
Keywords: gallium arsenide, III-V semiconductors, manganese compounds, spin polarised transport, tunnel diodes, tunnelling
Subjects:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Claudia Rahm
Deposited On:20 Oct 2009 12:14
Last Modified:13 Mar 2014 11:05
Item ID:9817
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