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Silicon/Germanium Strained-Layer Superlattices

Abstreiter, Gerhard and Eberl, Karl and Friess, E. and Wegscheider, Werner and Zachai, R. (1989) Silicon/Germanium Strained-Layer Superlattices. Advertisement Journal of Crystal Growth 95 (1-4), pp. 431-438.

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Abstract

High quality Si/Ge strained layer superlattices are achieved by low temperature molecular beam epitaxy on Si, SixGe1−x and Ge substrates. Various characterization techniques are used to obtain information on critical thickness, strain distribution, misfit dislocations, interface sharpness and superlattice periodicity. The band structure is strongly influenced by strain and zone folding effects. ...

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Item Type:Article
Date:February 1989
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0022-0248(89)90436-3DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 12:54
Last Modified:26 Oct 2009 12:54
Item ID:9976
Owner Only: item control page
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