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Silicon/Germanium Strained-Layer Superlattices

Abstreiter, Gerhard and Eberl, Karl and Friess, E. and Wegscheider, Werner and Zachai, R. (1989) Silicon/Germanium Strained-Layer Superlattices. Advertisement Journal of Crystal Growth 95 (1-4), pp. 431-438.

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High quality Si/Ge strained layer superlattices are achieved by low temperature molecular beam epitaxy on Si, SixGe1−x and Ge substrates. Various characterization techniques are used to obtain information on critical thickness, strain distribution, misfit dislocations, interface sharpness and superlattice periodicity. The band structure is strongly influenced by strain and zone folding effects. ...


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Item Type:Article
Date:February 1989
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited On:26 Oct 2009 12:54
Last Modified:26 Oct 2009 12:54
Item ID:9976
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