Eberl, Karl and Friess, H. and Wegscheider, Werner and Menczigar, U. and Abstreiter, Gerhard (1989) Improvement of structural properties of Si/Ge superlattices. Thin Solid Films 183 (1-2), pp. 95-103.
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Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100) and Ge(100) substrates. Low-energy electron diffraction and Auger electron spectroscopy are performed between growth intervals, to obtain structural and compositional information. Raman spectroscopy and transmission electron microscopy are used for ex-situ characterization. Different buffer layers, varying in thickness and composition, are investigated to minimize the defect density in a symmetrically strained Si/Ge superlattice and to optimize the superlattice quality for various strain adjustments. The maximum thickness for two-dimensional and lattice-matched growth of the individual silicon and germanium layers on a strain-symmetrizing buffer are discussed. In addition, the thermal stability of short-period Si/Ge superlattices is studied as a function of strain distribution.
|Date:||30 December 1989|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||26 Oct 2009 13:15|
|Last Modified:||20 Jul 2011 21:50|