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Improvement of structural properties of Si/Ge superlattices

Eberl, Karl and Friess, H. and Wegscheider, Werner and Menczigar, U. and Abstreiter, Gerhard (1989) Improvement of structural properties of Si/Ge superlattices. Thin Solid Films 183 (1-2), pp. 95-103.

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Abstract

Short-period Si/Ge strained-layer superlattices are grown by molecular beam epitaxy (MBE) on Si(100) and Ge(100) substrates. Low-energy electron diffraction and Auger electron spectroscopy are performed between growth intervals, to obtain structural and compositional information. Raman spectroscopy and transmission electron microscopy are used for ex-situ characterization. Different buffer ...

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Item Type:Article
Date:30 December 1989
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0040-6090(89)90434-3DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 13:15
Last Modified:13 Mar 2014 11:18
Item ID:9978
Owner Only: item control page

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